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Saturday, July 18, 2020 | History

1 edition of Localization and Metal-Insulator Transitions found in the catalog.

Localization and Metal-Insulator Transitions

by Hellmut Fritzsche

  • 65 Want to read
  • 36 Currently reading

Published by Springer US in Boston, MA .
Written in English

    Subjects:
  • Physics

  • Edition Notes

    Statementedited by Hellmut Fritzsche, David Adler
    SeriesInstitute for Amorphous Studies Series, Institute for Amorphous Studies series
    ContributionsAdler, David
    Classifications
    LC ClassificationsQC176-176.9
    The Physical Object
    Format[electronic resource] /
    Pagination1 online resource.
    ID Numbers
    Open LibraryOL27071556M
    ISBN 10146132517X
    ISBN 109781461325178
    OCLC/WorldCa840281725

      localization and the metal–insulator transition—experimental observations R. C. Dynes Department of Physics, University of California San Diego, La Jolla Ca. , USA β′-CuxV2O5 nanowires exhibit reversible phase transitions from metallic to insulating states (i.e., a metal-insulator transition, MIT). Unlike in VO2 where the MIT derives in part from a structural transition, the MIT in β′-CuxV2O5 is primarily an electronic phase transition. Here we show that the transition is underpinned by the diffusion of copper between two closely related sites (20)X.

    @article{osti_, title = {Anderson metal-insulator transitions with classical magnetic impurities}, author = {Jung, Daniel and Kettemann, Stefan}, abstractNote = {We study the effects of classical magnetic impurities on the Anderson metal-insulator transition (AMIT) numerically. In particular we find that while a finite concentration of Ising impurities lowers the critical value of the   The study of metal–insulator transitions (MITs) in crystalline solids is a subject of paramount importance, both from the fundamental point of view and for its relevance to the transport

      Basic Concepts of Localization. Elementary Scaling Theory of Localization. Self—Consistent Theory of Localization. Isotropic Systems. Quasi-Two-Dimensional Systems. Self-Consistent Theory of Localization in Magnetic Field. NMR Relaxation and Localization. Phase Transition Analogy and Scaling for Correlators. Interaction Effects and Anderson This Overview provides a general introduction to metal-insulator transitions, with focus on specific mechanisms that can localize the electrons in absence of magnetic or charge ordering, and produce well defined quantum critical behavior. The Overview contrasts the physical picture of Mott, who emphasized the role of electron-electron interactions, and that of Anderson, who stressed the :oso//.


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Localization and Metal-Insulator Transitions by Hellmut Fritzsche Download PDF EPUB FB2

The Metal-Insulator Transition and Superconductivity in Amorphous Molybdenum-Germanium Alloys Shozo Yoshizumi, David Mael, Theodore H. Geballet, Richard L.

Greene Pages Localization and Metal-Insulator Transitions. Editors: Fritzche, Hellmut (Ed.) Free Preview. Buy this book eB29 *immediately available upon purchase as print book shipments may be delayed due to the COVID crisis.

ebook access is temporary and does not include ownership of the ebook. Only valid for books with an ebook  › Physics › Condensed Matter Physics. The disordered insulator: electron glasses and crystals \/ T.F. Rosenbaum -- Tuning the metal-insulator transition in N-type silicon with a magnetic field \/ T.G.

Castner, and W.N. Shafarman -- Metal-semiconductor transitions in doped IV-VI semiconductors \/ R.S. Allgaier -- Metal-insulator transitions in pure and doped VO\u \/ G Get this from a library. Localization and Metal-Insulator Transitions. [Hellmut Fritzsche; David Adler] -- This volume and its two companion volumes, entitled Tetrahedrally-Bonded Amorphous Semiconductors and Physics of Disordered Materials, are our way of paying special tribute to Sir Nevill Mott and to Localization and Metal-Insulator Transitions (Institute for Amorphous Studies Series) Softcover reprint of the original 1st ed.

Edition by Hellmut Fritzche (Editor) ISBN  › Books › Science & Math › Physics. Localization lengths over metal to band insulator transitions Article (PDF Available) in Journal of Physics Condensed Matter 19(50) November with 85 Reads How we measure 'reads'   Localization and Metal-Insulator Transition in Multi-Layer Quantum Hall Structures Ziqiang Wang Department of Physics, Boston College, Chestnut Hill, MA leads to metallic and insulating phases and metal-insulator transitions in the unitary universality class.

Furthermore, the Hall conductivity Abstract. Heavily doped semiconductors exhibit, as the concentration of impurities is changed, the phenomenon of metal-insulator transition. Mott pointed out that Coulomb repulsion, if large enough in comparison with the transfer matrix element, inhibits electronic propagation in a half-filled band.

Subsequently, Hubbard 5 introduced a simple periodic model incorporating this competition Localization and metal-insulator transitions edited by Hellmut Fritzsche and David Adler (Institute for amorphous studies series) Plenum Press, Helmut HESS, in Strongly Coupled Plasma Physics, Insulator-metal transitions will occur in a variety of materials if the mean interatomic distance is decreased due to changes in pressure, temperature, or, in the case of mixtures, in concentration atomic or molecular gases which are dielectric at standard conditions, and where an insulator-metal transition has been found at low We study the localization properties of the one-dimensional nearest-neighbor tight-binding Schrödinger equation, u n+1 +u n-1 +V n u n =Eu n, where the on-site potential V n is neither periodic (the ``Bloch'' case) nor random (the ``Anderson'' case), but is aperiodic or pseudorandom.

In particular, we consider in detail a class of slowly varying potential with a typical example being Vn In this chapter, various data on localization in one and three dimensional (1D and 3D) systems are gathered into a unified pattern.

Using the Landauer formula, it is shown that random potential always localizes electrons in 1D, although the requirements to the randomness are rather severe; correlations can break localization.

All the models of disordered 3D, those named after Anderson, Mott :oso//. Localization and Metal-Insulator Transition in Multi-Layer Quantum Hall Structures. By Ziqiang Wang.

Get PDF ( KB) give rise to successive metallic and insulating phases and metal-insulator transitions in the unitary universality class.

(ii) The Hall conductivity is not renormalized in the metallic phases in the 3D regime. (iii) The Localization-driven metal insulator transition in epitaxial hole-doped Nd 1 x Sr x NiO 3 ultrathin films To cite this article: Le Wang et al J.

Phys.: Condens. Matter 29 View the article online for updates and enhancements. Related content Rare-earth nickelates RNiO3: thin films and heterostructures S Catalano, M Gibert, J Fowlie et Chapter -- for a forthcoming book "Perovskite" Metal-Insulator Transitions and non-Fermi Liquid Behaviors in 5d Perovskite Iridates Abhijit Biswas1, Ki-Seok Kim1,2, and Yoon Hee Jeong1,a Localization lengths over metal to band insulator transitions To cite this article: N D M Hine and W M C Foulkes J.

Phys.: Condens. Matter 19 View the article online for updates and enhancements. Related content Continuum variational and diffusion quantum Monte Carlo calculations R J Needs, M D Towler, N D Drummond et These transitions can be manipulated by tuning various ambient parameters, such as pressure, doping, strain, and so on.

For two-dimensional layered systems, there are extra degrees of freedom to achieve the metal-insulator transition by controlling the number of layers and/or shaping the layer ://   of disorder-driven transitions and order-parameter approaches to interaction-localization.

Nev-ertheless, mechanisms toward the metal-insulator transition remain controversial and somewhat incomplete, see [2,3] for reviews for a general introduction to metal-insulator :// Thickness-driven phase transitions have been widely observed in many correlated transition metal oxides materials.

One of the important topics is the thickness-driven metal to insulator transition in half-metal La 2/3 Sr 1/3 MnO 3 (LSMO) thin films, which has attracted great attention in the past few decades. In this article, we review research   Metal-Insulator Transitions: M.

Imada, A. Fujimori, and Y. Tokura, "Metal-insulator transitions", Rev. Mod. Phys. 70, (). This is an extensive review article which discusses many approaches to the problem from a practical point of. CiteSeerX - Document Details (Isaac Councill, Lee Giles, Pradeep Teregowda): We study the phase structure and Hall conductance quantization in weakly coupled multi-layer electron systems in the integer quantum Hall regime.

We derive the effective field theory and perform a two-loop renormalization group calculation. It is shown that (i) finite interlayer tunnelings (however small) give rise to ?doi=Localization lengths over metal to band insulator transitions  Understanding of metal insulator transitions in a strongly correlated system, driven by Anderson localization (disorder) and/or Mott localization (correlation), is a long standing problem in condensed matter physics.

The prevailing fundamental question would be how these two mechanisms contrive to accomplish emergent anomalous behaviors. Here, we have grown high quality perovskite